- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359056 > M36DR432B (意法半導(dǎo)體) 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號： | M36DR432B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 1/46頁 |
| 文件大?。?/td> | 328K |
| 代理商： | M36DR432B |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
1/46
November 2001
M36DR432A
M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DDF
= V
DDS
=1.65V to 2.2V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIME: 100,120ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR432A: 00A0h
– Bottom Device Code, M36DR432B: 00A1h
FLASH MEMORY
I
32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
I
PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
I
ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
I
DUAL BANK OPERATION
– Read within one Bank while Program or
Erase within the other
– No Delay between Read and Write
Operations
I
BLOCK PROTECTION ON ALL BLOCKS
– WPF for Block Locking
I
COMMON FLASH INTERFACE
– 64 bit Security Code
SRAM
I
4 Mbit (256K x 16 bit)
I
LOW V
DDS
DATA RETENTION: 1V
I
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36L0R7050B0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQ | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050T0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050T0ZAQ | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432B100ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B120ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B120ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432BD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。