參數資料
型號: M368L3313DTL-CB3
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
中文描述: 256MB的DDR SDRAM內存模塊(32Mx64(16Mx64 * 2銀行)的基礎上16Mx8 DDR內存)
文件頁數: 6/12頁
文件大?。?/td> 99K
代理商: M368L3313DTL-CB3
M368L3313DTL
Rev. 0.2 May.2002
184pin Unbuffered DDR SDRAM MODULE
DDR SDRAM IDD spec table
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Unit
Notes
IDD0
1320
1200
1200
mA
IDD1
1520
1400
1400
mA
IDD2P
48
48
48
mA
IDD2F
400
352
352
mA
IDD2Q
288
240
240
mA
IDD3P
560
560
560
mA
IDD3N
960
880
880
mA
IDD4R
1760
1576
1576
mA
IDD4W
1696
1480
1480
mA
IDD5
2000
1880
1880
mA
IDD6
Normal
32
32
32
mA
Low power
16
16
16
mA
Optional
IDD7A
3120
2840
2840
mA
AC OPERATING CONDITIONS
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIH(AC)
VIL(AC)
VREF + 0.31
V
V
3
3
VREF - 0.31
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Note 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simula-
tion. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
AC OPERATING TEST CONDITIONS
(V
DD
=2.5V, V
DDQ
=2.5V, T
A
= 0 to 70
°
C
)
Parameter
Value
Unit
Note
Input reference voltage for Clock
0.5 * VDDQ
V
Input signal maximum peak swing
1.5
V
Input Levels(VIH/VIL)
VREF+0.31/VREF-0.31
V
Input timing measurement reference level
VREF
V
Output timing measurement reference level
Vtt
V
Output load condition
See Load Circuit
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