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參數(shù)資料
| 型號(hào)： | M366S3253BTS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 32Mx64 SDRAM的內(nèi)存在32Mx8，4Banks，8K的刷新，3.3社民黨基于同步DRAM |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | M366S3253BTS |
PC133 Unbuffered DIMM
M366S3253BTS
REV. 0.1 July. 2000
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
±
0.3V, T
A
= 0 to 70
°
C)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
Notes :
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
-75
tCC=7.5ns
tCC=10ns
Row active to row active delay
t
RRD
(min)
15
20
ns
1
RAS to CAS delay
t
RCD
(min)
20
20
ns
1
Row precharge time
t
RP
(min)
20
20
ns
1
Row active time
t
RAS
(min)
45
50
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
65
70
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2
Last data in to Active delay
t
DAL
(min)
2 CLK + 20 ns
-
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
3
Number of valid output data
CAS latency=3
2
ea
4
CAS latency=2
-
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M366S3253BTS-C75 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C1H | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C7A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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