Electrical characteristics
178
Mitsubishi microcomputers
M16C / 62N Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Table 1.26.3. Electrical characteristics (referenced to VCC = 3.0V to 3.6V, VSS = 0V at Topr = – 20oC to
85oC / – 40oC to 85oC (Note 1), f(XIN) = 16MHZ unless otherwise specified)
Symbol
VOH
HIGH output voltage
VOH
VOL
LOW output
voltage
LOW output voltage
VOL
HIGH output
voltage
Standard
Typ.
Unit
Measuring condition
V
XOUT
2.8
V
0.5
V
XOUT
0.5
Min
Max.
2.8
Parameter
IOH = -1mA
IOH = -0.1mA, VCC = 3.3V
IOH = -50
A, VCC = 3.3V
IOL = 1mA
IOL = 0.1mA, VCC = 3.3V
IOL = 50
A, VCC = 3.3V
P00 to P07, P10 to P17, P20 to P27,
P00 to P07 ,P10 to P17, P20 to P27,
P30 to P37, P40 to P47, P50 to P57,
P60 to P67, P72 to P77, P80 to P84,
HIGHPOWER
LOWPOWER
P86, P87, P90 to P97, P100 to P107
HIGHPOWER
LOWPOWER
P60 to P67, P70 to P77, P80 to P84,
P86, P87, P90 to P97, P100 to P107
HIGHPOWER
LOWPOWER
HIGH output voltageXCOUT
With no load applied, VCC = 3.3V
2.8
1.6
V
Hysteresis
HIGH input
current
IIH
LOW input
current
I IL
V RAM
RAM retention voltage
IccPower supply current
VT+-VT-
0.2
0.8
V
0.2
1.8
V
P00 to P07, P10 to P17, P20 to P27,
P30 to P37, P40 to P47 ,P50 to P57,
P60 to P67, P70 to P77, P80 to P87,
P90 to P97, P100 to P107,
4.0
A
When clock is stopped
2.0
V
RESET
XIN, RESET, CNVss, BYTE
VI = 3V
VI = 0V
-4.0
P00 to P07, P10 to P17, P20 to P27,
P30 to P37, P40 to P47, P50 to P57,
P60 to P67, P70 to P77, P80 to P87,
P90 to P97, P100 to P107,
XIN, RESET, CNVss, BYTE
Square wave
f(XCIN) = 32kHz, VCC = 3.3V
40.0
A
R fXIN
R fXCIN
Feedback resistanceXIN
Feedback resistance
XCIN
10.0
3.0
M
Square wave, no division
f(XIN) = 16MHz,
mA
12.5
25.0
Mask ROM version
R PULLUP
100.0
k
P00 to P07, P10 to P17, P20 to P27,
P30 to P37, P40 to P47, P50 to P57,
P60 to P67, P72 to P77, P80 to P84,
P86, P87, P90 to P97 ,P100 to P107
LOW output voltage
V
XCOUT
0
With no load applied, VCC = 3.3V
HIGHPOWER
LOWPOWER
VI = 0V
20.0500.0
In single-chip
mode, the
output pins are
open and other
pins are VSS
Pull-up
resistance
Square wave, no division
f(XIN) = 16MHz
mA
20.0
32.0
Flash memory version
Mask ROM version
Square wave, in RAM(Note 3)
f(XCIN) = 32kHz, VCC = 3.3V
A
Flash memory version
CLK0 to CLK4,TA2OUT to TA4OUT,
TB0IN to TB5IN, INT0 to INT5, NMI,
ADTRG, CTS0 to CTS2, SCL, SDA
HOLD, RDY, TA0IN to TA4IN,
KI0 to KI3, RxD0 to RxD2, SIN3, SIN4
Square wave, in flash memory
f(XCIN) = 32kHz, VCC = 3.3V
225
A
Flash memory version
45
2.7
A
5.8
A
f(XCIN) = 32kHz, VCC = 3.3V
When a WAITinstruction
is executed.
Oscillation capacity High (Note 2)
When a WAIT instruction
is executed.
Oscillation capacity Low (Note 2)
Division by 2
f(XIN) = 16MHz, VCC = 3.3V
mA
Flash memory version
program
Division by 2
f(XIN) = 16MHz, VCC = 3.3V
21.0
mA
Flash memory version
erase
19.0
2.0
A
Topr = 85
°C, VCC = 3.3V
when clock is stopped
Topr = 25
°C, VCC = 3.3V
when clock is stopped
Note 1: Specify a product of -40
°C to 85°C to use it.
Note 2: With one timer operated using fC32.
Note 3: Refer to the shifting to the low power dissipation mode flowchart (Figure 1.29.2b).
0.1
0.4
Flash memory version
and mask ROM version
100
VCC = 3.3V
Mask ROM version
3.0
A
7.0
A
f(XCIN) = 32kHz, VCC = 3.3V
When a WAITinstruction
is executed.
Oscillation capacity High (Note 2)
When a WAIT instruction
is executed.
Oscillation capacity Low (Note 2)
Flash memory version