Mitsubishi microcomputers
M16C / 62 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Timing (Vcc = 3V)
209
Memory Expansion Mode and Microprocessor Mode
(When accessing external memory area with wait, and select multiplexed bus)
Measuring conditions :
V
CC
=3V
Input timing voltage : Determined with V
IL
=0.48V,V
IH
=1.5V
Output timing voltage : Determined with V
OL
=1.5V,V
OH
=1.5V
Read timing
Write timing
0ns.min
BCLK
CSi
ALE
60ns.max
–4ns.min
t
h(BCLK–CS)
4ns.min
tcyc
ADi
BHE
80ns.max
t
h(BCLK–DB)
4ns.min
Address
t
d(DB–WR)
(tcyc*3/2–80)ns.min
ADi
/DBi
Address
Data output
(tcyc/2)ns.min
(tcyc/2–60)ns.min
t
d(BCLK–ALE)
t
d(BCLK–WR)
60ns.max
4ns.min
BCLK
CSi
t
d(BCLK–CS)
60ns.max
ALE
RD
4ns.min
t
h(BCLK–CS)
4ns.min
tcyc
ADi
BHE
ADi
/DBi
t
h(RD–DB)
0ns.min
Address
(tcyc/2)ns.min
Data input
Address
tac3(RD–DB)
t
dz(RD–AD)
8ns.max
t
d(AD–RD)
0ns.min
t
d(AD–WR)
0ns.min
WR,WRL,
WRH
t
h(RD–CS)
t
d(AD–ALE) (tcyc/2–45)ns.min
t
SU(DB–RD)
80ns.min
t
h(ALE–AD)
50ns.min
t
d(BCLK–AD)
60ns.max
60ns.max
t
d(BCLK–ALE)
t
h(BCLK–ALE)
–4ns.min
(tcyc/2)ns.min
t
h(RD–AD)
t
h(BCLK–AD)
t
h(BCLK–RD)
0ns.min
t
d(BCLK–RD)
60ns.max
t
d(BCLK–CS)
60ns.max
t
h(WR–CS)
(tcyc/2)ns.min
t
d(BCLK–DB)
t
d(AD–ALE)
t
d(BCLK–AD)
60ns.max
t
h(WR–DB)
(tcyc/2)ns.min
t
h(BCLK–AD)
t
h(WR–AD)
t
h(BCLK–WR)
t
h(BCLK–ALE)
V
CC
= 3V
Figure 1.26.11. V
CC
=3V timing diagram (5)