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參數(shù)資料
| 型號： | M30621FGAGP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
| 中文描述： | 單片16位CMOS微機 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大小： | 594K |
| 代理商： | M30621FGAGP |
Electrical characteristics (Vcc = 3V)
Mitsubishi microcomputers
M16C / 62M (80-pin version) Group
(Low voltage version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
10
μ
s
V
V
t
SAMP
V
REF
V
IA
Sampling time
Reference voltage
Analog input voltage
0.3
2.4
Min.
Typ.
Max.
t
su
R
O
I
VREF
Note 1: This applies when using one D-A converter, with the D-A register for the unused D-A converter set to
“00
16
”.
The A-D converter's ladder resistance is not included.
Also, when DA register contents are not “00”, the current I
VREF
always flows even though Vref may have
been set to be unconnected by the A-D control register.
Note 2: Specify a product of -40
°
C to 85
°
C to use it.
Resolution
Absolute accuracy
Setup time
Output resistance
Reference power supply input current
Bits
%
μ
s
k
mA
1.0
1.5
8
3
Symbol
Parameter
Measuring condition
Unit
20
10
4
(
Note
)
Standard
Note 1: Connect AV
CC
pin to V
CC
pin and apply the same electric potential.
Note 2: Specify a product of -40
°
C to 85
°
C to use it.
Page program time
Block erase time
Erase all unlocked blocks time
Lock bit program time
6
50
50 X n (Note)
6
120
600
600 X n (Note)
120
ms
ms
ms
ms
Parameter
Standard
Typ.
Min.
Max
Unit
Note : n denotes the number of block erases.
R
LADDER
Ladder resistance
Conversion time(8bit), sample & hold
function not available
μ
s
9.8
10
V
CC
40
t
CONV
V
REF
= V
CC
Standard
Min.
Typ.
Max
10
Resolution
Absolute accuracy, sample & hold function not available (8 bit)
Bits
LSB
k
V
REF
= V
CC
±
2
Parameter
Measuring condition
Unit
V
REF
= V
CC
= 3V,
φ
AD
= f(X
IN
)/2
V
CC
V
REF
0
Symbol
V
REF
= V
CC
= 3V,
φ
AD
=
f(X
IN
) =f
AD
/2 = 5MHz
V
CC
= 3V
Table 1.20.3. A-D conversion characteristics (referenced to V
CC
= AV
CC
= V
REF
= 2.4V to 3.6V, V
SS
=
AV
SS
=
0V at
Ta = – 20
o
C to 85
o
C / – 40
o
C to 85
o
C(Note2)
, f(X
IN
) = 10MHz
unless otherwise
specified)
Table 1.20.4. D-A conversion characteristics (referenced to V
CC
= 2.4V to 3.6V, V
SS
= AV
SS
=
0V,
V
REF
= 3V, at Ta = – 20
o
C to 85
o
C / – 40
o
C to 85
o
C(Note2)
, f(X
IN
) = 10MHz
unless
otherwise specified)
Table 1.20.5.
Flash memory version electrical characteristics
(referenced to V
CC
= 2.7V to 3.6V, at Ta =0
o
C to 60
o
C unless otherwise specified)
Table 1.20.6.
Flash memory version program voltage and read operation voltage characteristics
(Ta =0
o
C to 60
o
C)
Flash program voltage
Flash read operation voltage
V
CC
=2.7V to 3.6V
V
CC
=2.4V to 3.6V
V
CC
=2.7V to 3.4V
V
CC
=2.2V to 2.4V
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