參數(shù)資料
型號: M30218FCFP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 10 MHz, MICROCONTROLLER, PQFP100
封裝: PLASTIC, QFP-100
文件頁數(shù): 7/19頁
文件大?。?/td> 2576K
代理商: M30218FCFP
F
S
Q0
765RS
Green-Mo
de
F
airchild
P
o
wer
Sw
itch
(FPS)
for
Qu
asi-Re
sonant
Operation
2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSQ0765RS Rev. 1.0.0
15
uses VCC instead of directly monitoring the output
voltage. If VCC exceeds 19V, an OVP circuit is activated
resulting in the termination of the switching operation. To
avoid undesired activation of OVP during normal
operation, VCC should be designed to be below 19V.
4.5 Thermal Shutdown with Hysteresis (TSD): The
SenseFET and the control IC are built in one package.
This enables the control IC to detect the abnormally high
temperature of the SenseFET. If the temperature
exceeds approximately 140°C, the thermal shutdown
triggers IC shutdown. The IC recovers its operation when
the junction temperature decreases 60°C from TSD
temperature and VCC reaches startup voltage (Vstart).
5. Soft-Start: The FPS has an internal soft-start circuit
that increases PWM comparator inverting input voltage
with the SenseFET current slowly after it starts up. The
typical soft-start time is 17.5ms. The pulse width to the
power-switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. This
mode helps prevent transformer saturation and reduces
stress on the secondary diode during startup.
6. Burst Operation: To minimize power dissipation in
standby mode, the FPS enters burst-mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 32, the device automatically enters
burst-mode when the feedback voltage drops below
VBURL (350mV). At this point, switching stops and the
output voltages start to drop at a rate dependent on
standby current load. This causes the feedback voltage
to rise. Once it passes VBURH (550mV), switching
resumes. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
Figure 32. Waveforms of Burst Operation
7. Switching Frequency Limit: To minimize switching
loss and Electromagnetic Interference (EMI), the
MOSFET turns on when the drain voltage reaches its
minimum value in quasi-resonant operation. However,
this causes switching-frequency to increases at light-
load conditions. As the load decreases or input voltage
increases, the peak drain current diminishes and the
switching frequency increases. This results in severe
switching losses at light-load condition, as well as
intermittent switching and audible noise. These problems
create limitations for the quasi-resonant converter
topology in a wide range of applications.
To overcome these problems, FSQ-series employs a
frequency-limit function, as shown in Figures 34 and 35.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (tB). After the
blanking time, the controller finds the valley within the
detection time window (tW) and turns on the MOSFET, as
shown in Figures 33 and Figure 34 (Cases A, B, and C).
If no valley is found during tW, the internal SenseFET is
forced to turn on at the end of tW (Case D). Therefore,
the devices have a minimum switching frequency of
48kHz and a maximum switching frequency of 67kHz.
V
FB
V
DS
0.35V
0.55V
I
DS
V
O
V
O
set
time
Switching
disabled
t1
t2 t3
Switching
disabled
t4
FSQ0765R Rev.00
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