參數(shù)資料
型號(hào): M2V64S40DTP
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁(yè)數(shù): 32/52頁(yè)
文件大?。?/td> 674K
代理商: M2V64S40DTP
Apr. '99
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.2)
M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
64M bit Synchronous DRAM
32
SWITCHING CHARACTERISTICS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise notedsee note3)
Output Load Condition
V
OUT
V
REF
=1.4V
50pF
50 ohm
V
TT
=1.4V
DQ
CLK
Output Timing
Measurement
Reference Point
1.4V
1.4V
DQ
CLK
tAC
tOH
tOHZ
Symbol
Parameter
Limits
Unit
-8A
-7, -7L
Min.
Max.
Min.
Max.
Min.
Max.
tAC
Access time from CLK
CL=2
8
6
ns
CL=3
6
6
ns
tOH
Output Hold time from
CLK
2.5
3
ns
tOLZ
Delay time, output low
impedance from CLK
0
0
ns
tOHZ
Delay time, output high
impedance from CLK
2.5
6
3
6
ns
Note:3
If tr(clock rising time) is longer than 1ns, (tT/2-0.5)ns should be added to the parameter.
-8, -8L
7
6
3
0
3
6
-10, -10L
Min.
Max.
8
8
3
0
3
8
相關(guān)PDF資料
PDF描述
M2V64S40DTP-6 64M Synchronous DRAM
M2V64S40DTP-6L 64M Synchronous DRAM
M2V64S40DTP-7 64M Synchronous DRAM
M2V64S40DTP-7L 64M Synchronous DRAM
M2V64S40DTP-8 64M Synchronous DRAM
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