參數(shù)資料
型號: M2V64S30DTP-6
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 22/52頁
文件大?。?/td> 674K
代理商: M2V64S30DTP-6
Apr. '99
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.2)
M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
64M bit Synchronous DRAM
22
[ Read Interrupted by Burst Terminate ]
Similar to a precharge, the burst terminate command, TBST, can interrupt the burst
read operation and disable the data output. The READ to TBST interval is a minimum
of one CLK. TBST is mainly used to interrupt FP bursts. The figures below show
examples, of how the output data is terminated with TBST.
Read Interrupted by Burst Terminate(BL=4)
CLK
Command
READ
TBST
DQ
Q0
Q1
Q2
Command
READ
TBST
DQ
Q0
Q1
Q2
Q3
Command
READ
TBST
DQ
Q0
Command
READ
TBST
DQ
Q0
Q1
Q2
Command
READ
TBST
DQ
Q0
Q1
Q2
Q3
Command
READ
TBST
DQ
Q0
CL=3
CL=2
相關PDF資料
PDF描述
M2V64S30DTP-6L 64M Synchronous DRAM
M2V64S30DTP-7 64M Synchronous DRAM
M2V64S30DTP-7L 64M Synchronous DRAM
M2V64S30DTP-8 64M Synchronous DRAM
M2V64S30DTP-8L 64M Synchronous DRAM
相關代理商/技術參數(shù)
參數(shù)描述
M2V64S30DTP-6L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S30DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S30DTP-7L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S30DTP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S30DTP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM