參數(shù)資料
型號(hào)： M2V56D30TP-75
廠商： Mitsubishi Electric Corporation
英文描述： 256M Double Data Rate Synchronous DRAM
中文描述： 256M雙數(shù)據(jù)速率同步DRAM
文件頁(yè)數(shù)： 7/40頁(yè)
文件大?。?/td> 768K
代理商： M2V56D30TP-75
7
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
BASIC FUNCTIONS
The M2S56D20/30/40A* provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at
CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and
precharge option, respectively. Refer to the command truth table for the detailed definition of commands.
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CLK
define basic commands
/CLK
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates one row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H in this command, the bank is deactivated after the burst read (auto-
precharge,
READA
)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is defined by burst length. When A10 =H in this command, the bank is deactivated after the burst write
(auto-precharge,
WRITEA
)
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H in this command, all banks are deactivated (precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh addresses including bank address are generated
internally. After this command, the banks are precharged automatically.
相關(guān)PDF資料
PDF描述
M2V56D40AKT-75A 256M Double Data Rate Synchronous DRAM
M2V56D40AKT-75AL 256M Double Data Rate Synchronous DRAM
M2V56D40AKT-75L 256M Double Data Rate Synchronous DRAM
M2V56D40ATP-10 256M Double Data Rate Synchronous DRAM
M2V56D40ATP-10L 256M Double Data Rate Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V56D40AKT-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40AKT-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40AKT-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40AKT-75A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40AKT-75AL 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
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