參數(shù)資料
型號: M2S56D20TP-75
廠商: Mitsubishi Electric Corporation
英文描述: 128 x 64 pixel format, LED Backlight available
中文描述: 256M雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 35/40頁
文件大?。?/td> 768K
代理商: M2S56D20TP-75
35
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is
allowed. tWR is referenced from the first positive CLK edge after the last data input.
[Write interrupted by Precharge]
Write Interrupted by Precharge (BL=8, CL=2.5)
Command
A0-9,11
A10
BA0,1
DQ
WRITE
Yi
0
00
PRE
00
Dai0
Dai1
QS
DM
tWR
/CLK
CLK
相關PDF資料
PDF描述
M2V56S20TP-6 128 x 64 pixel format, LED Backlight available
M2V56S30TP-6 128 x 64 pixel format, LED Backlight available
M2V56S40TP-6 128 x 64 pixel format, LED Backlight available
M2V56S30ATP-7 256M Synchronous DRAM
M2V56S30TP 256M Synchronous DRAM
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