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| 型號(hào)： | M2S12D20TP-10L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 512M雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 16/38頁(yè) |
| 文件大?。?/td> | 754K |
| 代理商： | M2S12D20TP-10L |
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MITSUBISHI
ELECTRIC
-16-
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
Feb. '02
MITSUBISHI LSIs
DDR SDRAM (Rev.1.1)
MITSUBISHI ELECTRIC
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
Supply Voltage
DC OPERATING CONDITIONS
(Ta=0 ~ 70
o
C, unless otherwise noted)
Min.
2.3
2.3
Typ.
2.5
2.5
Max.
2.7
2.7
Vdd
VddQ
Vref
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC) Input Differential Voltage, CLK and /CLK
VTT
I/O Termination Voltage
Supply Voltage
Supply Voltage for Output
Input Reference Voltage
High-Level Input Voltage
Low-Level Input Voltage
Input Voltage Level, CLK and /CLK
V
V
V
V
V
V
V
V
0.49*VddQ
Vref + 0.15
-0.3
-0.3
0.36
Vref - 0.04
0.50*VddQ 0.51*VddQ
5
VddQ+0.3
Vref - 0.15
VddQ + 0.3
VddQ + 0.6
Vref + 0.04
7
6
Notes
Limits
Symbol
Parameter
Unit
Parameter
Conditions
with respect to Vss
Ratings
-0.5 ~ 3.7
Unit
V
VddQ
VI
Supply Voltage for Output
Input Voltage
with respect to VssQ
with respect to Vss
-0.5 ~ 3.7
-0.5 ~ Vdd+0.5
V
V
VO
IO
Output Voltage
Output Current
with respect to VssQ
-0.5 ~ VddQ+0.5
50
V
mA
Pd
Topr
Power Dissipation
Operating Temperature
Ta = 25
o
C
1500
0 ~ 70
mW
o
C
o
C
Tstg
Storage Temperature
-65 ~ 150
AC OVERSHOOT/UNDERSHOOT SPECIFICATION
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and Vdd must be less
than or euqal to
The area between the undershoot signal and Vss must be
less than or euqal to
5
4
3
2
1
Vss(0)
-1
-2
-3
Specification
1.6V
1.6V
4.5 V-ns
4.5 V-ns
V
0
0.5 1 1.5
2 2.5
3 3.5 4
4.5
5 5.5
6 6.5 7
7.5
5.625
Maximum Amplitude
Overshoot
undershoot
Maximum Amplitude
Area (max.4.5V-ns)
Vdd
time (ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V12D20TP-10L | 128 x 64 pixel format, LED Backlight available |
| M2S12D30TP-10L | 128 x 64 pixel format, LED Backlight available |
| M2V12D30TP-10L | 128 x 64 pixel format, LED Backlight available |
| M2V12D20TP | 512M Double Data Rate Synchronous DRAM |
| M2V12D20TP-75L | 512M Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2S12D20TP-75 | 制造商:Elpida Memory Inc 功能描述:128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| M2S12D20TP-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D30TP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D30TP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D30TP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
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