參數(shù)資料
型號(hào)： M29W800T100M1R
廠商： 意法半導(dǎo)體
英文描述： Low-Power Configurable Multiple-Function Gate 6-SOT -40 to 85
中文描述： 8兆1兆x8或512KB的x16插槽，引導(dǎo)塊低壓單電源閃存
文件頁數(shù)： 1/33頁
文件大?。?/td> 233K
代理商： M29W800T100M1R
AI02178
19
A0-A18
W
DQ0-DQ14
VCC
M29W800T
M29W800B
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Figure 1. LogicDiagram
M29W800T
M29W800B
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W800T and M29W800Bare replaced
respectivelyby the M29W800AT and
M29W800AB
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 90ns
FASTPROGRAMMING TIME
– 10
μ
s by Byte / 20
μ
s byWord typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29W800T:00D7h
– Device Code, M29W800B:005Bh
DESCRIPTION
The M29W800 is a non-volatilememory that may
be erasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word-
by-Wordbasisusingonlya single2.7Vto3.6VV
CC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
June 1999
1/33
This is informationon a product still in productionbutnot recommended for newdesigns.
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
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