參數(shù)資料
型號: M29W800DB90ZA6E
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
中文描述: 8兆(1兆x8或512KB的x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 41/42頁
文件大小: 275K
代理商: M29W800DB90ZA6E
41/42
M29W800DT, M29W800DB
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
August 2001
1.0
First Issue
03-Dec-2001
2.0
Block Protection Appendix added, SO44 drawing and package mechanical data updated,
CFI Table 26, address 39h/72h data clarified, Read/Reset operation during Erase
Suspend clarified
01-Mar-2002
3.0
Description of Ready/Busy signal clarified (and
Figure 15.
modified)
Clarified allowable commands during block erase
Clarified the mode the device returns to in the CFI Read Query command section
11-Apr-2002
4.0
Temperature range 1 added
Document promoted from Preliminary Data to full Data Sheet
31-Mar-2003
4.1
Erase Suspend Latency Time (typical and maximum) and Data Retention parameters
added to Table
Table 6., Program, Erase Times and Program, Erase Endurance Cycles
,
and Typical after 100k W/E Cycles column removed. Minimum voltage corrected for 70ns
Speed Class in
Table 9.
,
Operating and AC Measurement Conditions
.
Logic Diagram and Data Toggle Flowchart corrected.
Lead-free package options E and F added to
Table 20., Ordering Information Scheme
.
13-Feb-2004
5.0
TSOP48 package Outline and Mechanical Data updated.
TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch added.
Table 9.Operating and AC Measurement Conditions
updated for 70ns speed option.
23-Apr-2004
6.0
Figure 3., SO Connections
updated.
16-Sep-2004
7.0
45ns speed class added.
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