參數(shù)資料
型號： M29W320DB90ZA1E
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù)： 38/46頁
文件大?。?/td> 853K
代理商： M29W320DB90ZA1E
M29W320DT, M29W320DB
38/46
Table 25. Primary Algorithm-Specific Extended Query Table
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
32 Kbyte
39h
3Ah
72h
74h
003Eh
0000h
Region 4 Information
Number of identical-size erase block = 003Eh+1
63
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
64 Kbyte
Address
Data
Description
Value
x16
x8
40h
80h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h
82h
0052h
"R"
42h
84h
0049h
"I"
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0030h
Minor version number, ASCII
"0"
45h
8Ah
0000h
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of blocks in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
Yes
49h
92h
0004h
Block Protect /Unprotect
04 = M29W400B
4
4Ah
94h
0000h
Simultaneous Operations, 00 = not supported
No
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0000h
Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page word
No
4Dh
9Ah
00B5h
V
PP
Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
11.5V
4Eh
9Ch
00C5h
V
PP
Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12.5V
4Fh
9Eh
000xh
Top/Bottom Boot Block Flag
02h = Bottom Boot device, 03h = Top Boot device
–
Address
Data
Description
Value
x16
x8
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