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參數資料
| 型號： | M29W320DB70ZE6T |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，啟動塊3V電源快閃記憶體 |
| 文件頁數： | 37/46頁 |
| 文件大?。?/td> | 853K |
| 代理商： | M29W320DB70ZE6T |
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M29W320DT, M29W320DB
Table 23. CFI Query System Interface Information
Table 24. Device Geometry Definition
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
46h
0005h
Maximum timeout for byte/word program = 2
n
times typical
512μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0004h
Maximum timeout per individual block erase = 2
n
times typical
16s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0016h
Device Size = 2
n
in number of bytes
4 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 Kbyte
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