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參數資料
| 型號： | M29W160DB90ZA6F |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（含2Mb x8或1兆x16插槽，引導塊）3V電源快閃記憶體 |
| 文件頁數： | 15/44頁 |
| 文件大小： | 333K |
| 代理商： | M29W160DB90ZA6F |
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M29W160DT, M29W160DB
Table 4. Commands, 16-bit mode, BYTE = V
IH
Note:
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Read/Reset.
After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select.
After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase.
After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass.
After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset.
After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend.
After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com-
mands on non-erasing blocks as normal.
Erase Resume.
After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Pro-
gram/Erase Controller completes and the memory returns to Read Mode.
CFI Query.
Command is valid when device is ready to read array data or when device is in autoselected mode.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read CFI Query
1
55
98
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PDF描述 |
|---|---|
| M29W160DT70M1 | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M1E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M1F | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M6 | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M6E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M29W160DB90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DT70M1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
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