參數(shù)資料
型號: M29W040B90NZ6E
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 12/20頁
文件大?。?/td> 161K
代理商: M29W040B90NZ6E
M29W040B
12/20
Figure 8. Read Mode AC Waveforms
AI02903
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A18
G
DQ0-DQ7
E
tELQV
tEHQX
tGHQZ
VALID
Table 11. Read AC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29W040B
Unit
55
70
90 / 120
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
,
G = V
IL
Min
55
70
90
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
55
70
90
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
Min
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
55
70
90
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
30
30
35
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
20
25
30
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
20
25
30
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
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