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參數(shù)資料
| 型號(hào)： | M29W040B120K1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓?jiǎn)坞娫撮W存 |
| 文件頁(yè)數(shù)： | 11/20頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | M29W040B120K1E |
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11/20
M29W040B
Table 10. DC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C)
Note: 1. Sampled only, not 100% tested.
2. T
A
= 25°C, V
CC
= 3.3V.
Symbol
Parameter
Test Condition
Min
Typ.
(2)
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
4
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
± 0.2V
30
100
μA
I
CC3
(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100μA
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(1)
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040B120K1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B120K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B120K6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B120K6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B120K6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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