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參數(shù)資料
| 型號(hào)： | M29W040-200NZ5TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP RF 24PF 250V 0603 SMD |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓?jiǎn)坞娫撮W存 |
| 文件頁(yè)數(shù)： | 2/31頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-200NZ5TR |
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A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
E
A8
A9
DQ7
DQ6
A11
G
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI02076
M29W040
(Normal)
8
9
1
16
17
24
25
32
Figure 2B. TSOP Pin Connections
AI02075
A
A13
A8
A9
A11
G
A10
E
D
17
A1
A0
DQ0
D
D
D
D
A7
A6
A5
A4
A3
A2
9
W
1
A
DQ7
A
A14
32
A
V
M29W040
A
D
25
V
Figure 2A. LCC Pin Connections
A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
A8
A9
DQ7
DQ6
A11
G
E
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI02077
M29W040
(Reverse)
8
9
1
16
17
24
25
32
Figure 2C. TSOP ReversePin Connections
DESCRIPTION
The M29W040 is a non-volatile memory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32,TSOP32(8 x 20mm)and
TSOP32(8 x 14mm)packagesare available.Both
normal and reverse pin outs are available for the
TSOP32 (8 x 20mm) package.
Organisation
TheFlashMemoryorganisationis512Kx8bitswith
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enableand Write Enable Inputs.
Erase and Program are performed through the
internal Program/EraseController (P/E.C.).
Data Outputs bitsDQ7 and DQ6provide polling or
togglesignals during AutomaticProgram or Erase
to indicate the Ready/Busy state of the internal
Program/EraseController.
MemoryBlocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
2/31
M29W040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W040-100NZ6R | CAP RF 27PF 250V 0603 SMD |
| M29W040-120NZ6R | CAP RF 2.0PF 250V 0603 SMD |
| M29W040-150NZ6R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ6R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200N1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-200NZ6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B120K1 | 功能描述:閃存 4M (512Kx8) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W040B120K1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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