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參數(shù)資料
| 型號： | M29W040-200NZ1TR |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 3/31頁 |
| 文件大小： | 205K |
| 代理商： | M29W040-200NZ1TR |
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Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO
(2)
Input or Output Voltages
–0.6 to 5
V
V
CC
Supply Voltage
–0.6 to 5
V
V
A9
(2)
A9 Voltage
–0.6 to 13.5
V
Notes:
1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listedin theTable ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or any other
conditions above those indicated in the Operating sections of this specificationis not implied. Exposure to AbsoluteMaximum
Rating conditions for extended periods may affect device reliability.Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltagemay undershootto –2V during transition and for less than 20ns.
3. Depends on range.
Table2. AbsoluteMaximumRatings
(1)
block may separately be protected and unpro-
tected against program and erase. Block erasure
may be suspended,while data is read from other
blocks of the memory, and then resumed.
Bus Operations
Seven operationscan be performed bythe appro-
priate bus cycles, Read Array, Read Electronic
Signature,OutputDisable,Standby,ProtectBlock,
Unprotect Block, and Write the Command of an
Instruction.
Command Interface
Command Bytes can be written to a Command
Interface(C.I.) latch to performReading (from the
Array or Electronic Signature), Erasure or Pro-
gramming. For added data protection, command
executionstarts after 4 or 6 command cycles. The
first, second, fourth and fifth cycles are used to
input a code sequenceto the Command Interface
(C.I.). Thissequenceis equalfor allP/E.C.instruc-
tions. Command itself and its confirmation - if it
applies - are given on the third and fourth or sixth
cycles.
Instructions
Eight instructions are defined to perform Reset,
Read Electronic Signature, Auto Program, Block
Auto Erase, Chip Auto Erase, Block Erase Sus-
pend, BlockErase Resumeand PowerDown.The
internalProgram/EraseController(P/E.C.)handles
all timingand verificationof theProgramandErase
instructionsandprovidesData Polling,Toggle,and
Statusdata toindicatecompletionof Programand
Erase Operations.
Instructionsare composedof up to six cycles.The
first twocyclesinput a codesequenceto theCom-
mand Interface which is common to all P/E.C.
instructions (see Table 7 for Command Descrip-
tions). The third cycle inputs the instructionset up
command instruction to the Command Interface.
SubsequentcyclesoutputSignature,BlockProtec-
tion or the addressed data for Read operations.
For addeddata protection,the instructionsfor pro-
gram,and blockor chiperase require furthercom-
mand inputs. For a Programinstruction,the fourth
command cycle inputs the addressand data to be
programmed. For an Erase instruction (block or
chip),the fourthand fifthcyclesinputa furthercode
sequence before the Erase confirm command on
the sixth cycle. Byte programming takes typically
12
μ
s while erase is performedin typically1.5 sec-
ond.
Erasure of a memory block may be suspended,in
order to read data from another block, and then
resumed.Data Polling, Toggleand Errordata may
be read at any time,including during the program-
ming or erase cycles, to monitor the progress of
the operation.When power is firstappliedor ifV
CC
fallsbelowV
LKO
,thecommandinterfaceis resetto
ReadArray.
3/31
M29W040
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-200NZ5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200NZ6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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