參數(shù)資料
型號: M29W040-200N5TR
廠商: 意法半導(dǎo)體
英文描述: High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 18/31頁
文件大?。?/td> 205K
代理商: M29W040-200N5TR
AI01366B
E
G
W
A0-A18
DQ0-DQ7
VALID
VALID
VCC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
WRITE CYCLE
tDVEH
tELEH
tGHEL
Figure 8. WriteAC Waveforms, E Controlled
Note:
Address are latched on thefalling edge of E, Data is latched on the rising edge of E.
18/31
M29W040
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M29W040-200N6R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040-200N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040-200NZ1R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040-200NZ1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040-200NZ5R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory