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參數(shù)資料
| 型號： | M29W040-200K6TR |
| 廠商： | 意法半導體 |
| 英文描述： | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-200K6TR |
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Symbol
Alt
Parameter
Test Condition
M29W040
Unit
-150
-200
V
CC
= 2.7V to 3.6V V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address
Valid
E = V
IL
, G = V
IL
150
200
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
150
200
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
150
200
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV(2)
t
OE
Output Enable Low to Output
Valid
E = V
IL
55
70
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
40
50
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ(1)
t
DF
Output Enable High to Output
Hi-Z
E = V
IL
40
50
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
Notes:
1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
afterthe falling edge of E without increasing t
ELQV
.
Table12B. Read AC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Read Array/Reset(RST) instruction.
The Reset
instruction consists of one write operation giving
the command F0h. It can be optionally preceded
by thetwo codedcycles.Await stateof5
μ
s before
readoperationsisnecessaryif theResetcommand
is appliedduring an Erase or PowerDown opera-
tion.
Read Electronic Signature (RSIG) instruction.
Thisinstructionusesthetwocodedcyclesfollowed
by one write cycle giving the command 90h to
address5555h for commandsetup. Asubsequent
read will output the manufacturercode,the device
code or the Block Protection status depending on
the levels of A0, A1, A6, A16, A17 and A18. The
manufacturer code, 20h, is output when the ad-
dresses lines A0, A1 and A6 are Low, the device
code, E2h is output when A0 is High with A1 and
A6 Low.
Read Block Protection (RBP) instruction.
The
useof ReadElectronicSignature(RSIG)command
also allows access to the Block Protection status
verify. After givingthe RSIGcommand, A0 and A6
are set to V
IL
with A1 at V
IH
, while A16, A17 and
A18 define the block of the block to be verified. A
read in theseconditions willoutputa 01hif blockis
protectedand a 00h if blockis not protected.
ThisRead BlockProtectionis the onlyvalid way to
check the protection status of a block. Neverthe-
less,it mustnotbeusedduringtheblockprotection
phase as a method to verify the Block Protection.
Please refer to BlockProtectionparagraph.
PowerDown (PD)instruction.
ThePowerDown
instructionuses one write cycle to put thememory
into a power down mode where current consump-
tion is typically reduced to less than 1.0
μ
A. Once
in this state, a Reset (RST) command must be
written to the P/E.C. prior to any operation.
11/31
M29W040
相關PDF資料 |
PDF描述 |
|---|---|
| M29W040-200K6R | High Speed High Drive Precision Dual Operational Amplifier 8-SOIC -55 to 125 |
| M29W040-200K5TR | High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125 |
| M29W040-200K5R | High Speed High Drive Precision Dual Operational Amplifier 10-CFP -55 to 125 |
| M29W040-200K1TR | High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 |
| M29W040-200K1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-200N1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200N5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-200N6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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