參數(shù)資料
型號(hào): M29W040-150NZ1R
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 9/31頁
文件大小: 205K
代理商: M29W040-150NZ1R
AI01417
3V
0V
1.5V
Figure 4. AC TestingInputOutput Waveform
AI01968
0.8V
OUT
CL= 30pF or 100pF
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 5. AC TestingLoad Circuit
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table10. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Input Rise and Fall Times
10ns
Input Pulse Voltages
0 to3V
Input and Output Timing Ref. Voltages
1.5V
Table9. AC MeasurementConditions
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±
1
μ
A
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
20
mA
I
CC2
Supply Current (Standby) TTL
E = V
IH
0.2
mA
I
CC3
Supply Current (Standby) CMOS
E = V
CC
±
0.2V
50
μ
A
I
CC4
Supply Current (Program or Erase)
Byte Program,
Block Erase
20
mA
I
CC5
Supply Current
Chip Erase in progress
40
mA
I
CC6
Power Down Current
E = V
CC
±
0.2V
5
μ
A
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2mA
0.45
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
–0.4
V
I
OH
= –2.0mA
0.85 V
CC
V
V
ID
A9 Voltage(Electronic Signature)
11.5
12.5
V
I
ID
A9 Current (Electronic Signature)
A9 = V
ID
50
μ
A
V
LKO
Supply Voltage (Erase and
Program lock-out)
1.9
2.2
V
Table11. DC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C; V
CC
= 2.7V to 3.6V)
9/31
M29W040
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