參數(shù)資料
型號(hào): M29W040-100NZ6TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù): 19/31頁(yè)
文件大?。?/td> 205K
代理商: M29W040-100NZ6TR
Symbol
Alt
Parameter
M29W040
Unit
-100
-120
V
CC
= 3.3V
±
0.3V
C
L
= 30pF
V
CC
= 3.3V
±
0.3V
Min
Max
Min
Max
t
WHQ7V1(2)
Write Enable High to DQ7Valid
(Program, W Controlled)
12
12
μ
s
t
WHQ7V2(2)
Write Enable High to DQ7Valid
(Block Erase, W Controlled)
1.5
30
1.5
30
sec
t
EHQ7V1
(2)
Chip Enable High to DQ7 Valid
(Program, E Controlled)
12
12
μ
s
t
EHQ7V2
(2)
Chip Enable High to DQ7 Valid
(Block Erase, E Controlled)
1.5
30
1.5
30
sec
t
Q7VQV
Q7 Validto Output Valid(Data Polling)
45
50
ns
t
WHQV1
Write Enable High to Output Valid
(Program)
12
12
μ
s
t
WHQV2
Write Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
t
EHQV1
Chip Enable High to Output Valid
(Program)
12
12
μ
s
t
EHQV2
Chip Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
Notes:
1. All other timings are defined in Read AC Characteristics table.
2. t
WHQ7V
is the Program or Erase time.
Table15A. Data Pollingand ToggleBit ACCharacteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
19/31
M29W040
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