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參數(shù)資料
| 型號： | M29W040-100K6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 20/31頁 |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-100K6TR |
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Symbol
Alt
Parameter
M29W040
Unit
-150
-200
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
WHQ7V1(2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
12
12
μ
s
t
WHQ7V2(2)
Write Enable High to DQ7 Valid
(Block Erase, W Controlled)
1.5
30
1.5
30
sec
t
EHQ7V1(2)
Chip EnableHigh to DQ7 Valid
(Program, E Controlled)
12
12
μ
s
t
EHQ7V2(2)
Chip EnableHigh to DQ7 Valid
(Block Erase, E Controlled)
1.5
30
1.5
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
55
70
ns
t
WHQV1
Write Enable High to Output Valid
(Program)
12
12
μ
s
t
WHQV2
Write Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
t
EHQV1
Chip EnableHigh to Output Valid
(Program)
12
12
μ
s
t
EHQV2
Chip EnableHigh to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
Notes:
1. Allother timingsare defined in Read AC Characteristics table.
2. t
WHQ7V
is the Programor Erase time.
Table15B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
20/31
M29W040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W040-100N1TR | High Speed High Drive Precision Operational Amplifier 8-SOIC -55 to 125 |
| M29W040-100N5TR | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120NZ1R | ; Capacitance:180pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount |
| M29W040-150NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-100N1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100N6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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