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參數(shù)資料
| 型號： | M29W022 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，啟動(dòng)塊低壓單電源閃存 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 123K |
| 代理商： | M29W022 |
M29W022BT, M29W022BB
4/20
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A17).
The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs outputthedata stored at the selected
address during a Bus Read operation. DuringBus
Write operations they represent the commands
sent tothe CommandInterface of the internal state
machine.
Chip Enable (E).
The Chip Enable, E, activates
the memory, allowing BusRead and Bus Writeop-
erations to be performed. When Chip Enable is
High, V
IH
, all other pins are ignored.
Output Enable (G).
The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W).
The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. Thisprevents Bus Write operationsfrom ac-
cidentally damaging the data during power-up,
power-down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operationaborts and the memo-
ry contents being altered will be invalid.
A 0.1
μ
F capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widthsmust be sufficient to
carry the currents required during program and
erase operations, I
CC3
.
V
SS
Ground.
The V
SS
Ground is the reference for
all voltage measurements.
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| M29W022BT55NZ1T | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55NZ1T | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BT70K6T | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55K6T | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W022BB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55K6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55NZ1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB55NZ6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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