參數(shù)資料
型號: M29W017D70ZA6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座3V電源快閃記憶體
文件頁數(shù): 1/36頁
文件大?。?/td> 251K
代理商: M29W017D70ZA6T
1/36
PRELIMINARY DATA
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29W017D
16 Mbit (2Mb x8, Uniform Block)
3V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
I
ACCESS TIME: 70, 90ns
I
PROGRAMMING TIME
– 10μs per Byte typical
I
32 UNIFORM 64 KByte MEMORY BLOCKS
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithms
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
COMMON FLASH INTERFACE
– 64 bit Security Code
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: C8h
Figure 1. Packages
TSOP40 (N)
10 x 20mm
TFBGA48 (ZA)
6 x 8 ball array
FBGA
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