- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359037 > M29W017D70N1T (意法半導(dǎo)體) 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M29W017D70N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 29/36頁(yè) |
| 文件大小： | 251K |
| 代理商： | M29W017D70N1T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)當(dāng)前第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)
29/36
M29W017D
Table 19. CFI Query System Interface Information
Table 20. Device Geometry Definition
Address
Data
Description
Value
1Bh
27h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
36h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00h
V
PP
[Programming] Supply Minimum Program/Erase voltage
NA
1Eh
00h
V
PP
[Programming] Supply Maximum Program/Erase voltage
NA
1Fh
04h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
00h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
0Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
00h
Typical timeout for full chip erase = 2
n
ms
NA
23h
04h
Maximum timeout for byte/word program = 2
n
times typical
256μs
24h
00h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
03h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
00h
Maximum timeout for chip erase = 2
n
times typical
NA
Address
Data
Description
Value
27h
15h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
00h
00h
Flash Device Interface Code description
x8
Async.
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
01h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
1
2Dh
2Eh
1Fh
00h
Region 1 Information
Number of identical size erase block = 001Fh+1
32
2Fh
30h
00h
01h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W017D70N6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W017D70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA6 | 功能描述:閃存 16M (2Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W017D70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N1 | 功能描述:閃存 16M (2Mx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。