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參數(shù)資料
| 型號： | M29W017B |
| 廠商： | 意法半導體 |
| 英文描述： | 16Mbit(2Mbx8, Uniform Block) Low Voltage Single Supply Flash Memory(16Mb閃速存儲器) |
| 中文描述： | 16兆（2Mbx8，統(tǒng)一座）低電壓單電源閃存（16Mb的閃速存儲器） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | M29W017B |
B29W017B/811
Complete data available on
DATA-on-DISC CD-ROM
or at
www.st.com
1/2
M29W017B
16 Mbit (2Mb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
DATA BRIEFING
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 80ns
FAST PROGRAMMING TIME: 13
μ
s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCK for SECURITY CODE
MEMORY BLOCKS
– 32 Uniform Blocks of 64 Kbyte
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
BLOCK PROTECTION ACCESS COMMAND
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
BYPASS MODE
– Faster Programming Sequence
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W017B: C8h
DESCRIPTION
The M29W017B is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks.
AI02713
21
A0-A20
W
DQ0-DQ7
VCC
M29W017B
E
VSS
8
G
RP
RB
Logic Diagram
TSOP40 (N)
10 x 20 mm
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| M29W040B120K1E | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W017D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA6 | 功能描述:閃存 16M (2Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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