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參數(shù)資料
| 型號(hào)： | M29W010B90N3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 1兆位的128KB × 8，統(tǒng)一座低電壓?jiǎn)坞娫撮W存 |
| 文件頁(yè)數(shù)： | 11/19頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | M29W010B90N3T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
11/19
M29W010B
Table 10. DC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
± 0.2V
100
μA
I
CC3
(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100μA
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(1)
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M29W010B90N6 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B90N6E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B90N6F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B90N6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W017D | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
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