參數(shù)資料
型號： M29W008T-120N1TR
廠商： 意法半導體
英文描述： Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP
中文描述： 8兆1兆× 8，啟動塊低壓單電源閃存
文件頁數(shù)： 24/30頁
文件大?。?/td> 219K
代理商： M29W008T-120N1TR
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
35
40
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17A. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
C
L
= 100pF
V
CC
= 2.7V to 3.6V
C
L
= 100pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
24/30
M29W008T, M29W008B
相關PDF資料
PDF描述
M29W008T-120N5TR Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125
M29W008T-120N6TR Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125
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相關代理商/技術參數(shù)
參數(shù)描述
M29W008T-120N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-120N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-150N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-150N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-150N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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