參數(shù)資料
型號(hào): M29W008ET70N1F
廠商: 意法半導(dǎo)體
英文描述: Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC
中文描述: 8兆(1兆× 8,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 36/43頁(yè)
文件大小: 282K
代理商: M29W008ET70N1F
9 Part numbering
M29W008ET, M29W008EB
36/43
Appendix B Block protection
Block protection can be used to prevent any operation from modifying the data stored in the
Flash. Each Block can be protected individually. Once protected, Program and Erase
operations on the block fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described
in the Signal Descriptions section.
Unlike the Command Interface of the Program/Erase Controller, the techniques for protecting
and unprotecting blocks change between different Flash memory suppliers. For example, the
techniques for AMD parts will not work on STMicroelectronics parts. Care should be taken
when changing drivers for one part to work on another.
9.1
Programmer technique
The Programmer technique uses high (V
ID
) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a block follow the flowchart in
Figure 15: Programmer Equipment Block Protect
Flowchart
. To unprotect the whole chip it is necessary to protect all of the blocks first, then all
blocks can be unprotected at the same time. To unprotect the chip follow
Figure 16:
Programmer Equipment Chip Unprotect Flowchart
.
Table 18: Programmer Technique Bus
Operations
, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do not abort the procedure before reaching the
end. Chip Unprotect can take several seconds and a user message should be provided to show
that the operation is progressing.
9.2
In-System technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP. This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
Flash has been fitted to the system.
To protect a block follow the flowchart in
Figure 17: In-System Equipment Block Protect
Flowchart
. To unprotect the whole chip it is necessary to protect all of the blocks first, then all
the blocks can be unprotected at the same time. To unprotect the chip follow
Figure 18: In-
System Equipment Chip Unprotect Flowchart
.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do not allow the microprocessor to service
interrupts that will upset the timing and do not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a user message should be provided to show that
the operation is progressing.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008ET70N6E 制造商:Micron Technology Inc 功能描述:FLASH TOP BLOCK 8MB SMD 29W008
M29W008ET70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET90N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET90N6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory