參數(shù)資料
型號(hào)： M29W008EB
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 1/30頁(yè)
文件大?。?/td> 218K
代理商： M29W008EB
1/30
March 2000
M29W008AT
M29W008AB
8 Mbit (1Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
I
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 80ns
I
PROGRAMMING TIME: 10μs typical
I
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
I
SECURITY PROTECTION MEMORY AREA
I
INSTRUCTIONS ADDRESS CODING: 3 digits
I
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
I
BLOCK, MULTI-BLOCK and CHIP ERASE
I
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M29W008AT: D2h
– Bottom Device Code, M29W008AB: DCh
Figure 1. Logic Diagram
AI02716
20
A0-A19
W
DQ0-DQ7
VCC
M29W008AT
M29W008AB
E
VSS
8
G
RP
RB
TSOP40 (N)
10 x 20mm
相關(guān)PDF資料
PDF描述
M29W008AB90N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:26; Connector Shell Size:16; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008EB70N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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M29W008EB70N6E 制造商:Micron Technology Inc 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29W008 制造商:Numonyx Memory Solutions 功能描述:IC, FLASH, 8MBIT, 70NS, TSOP-40, Memory Type:Flash - Boot Block, Memory Size:8Mb
M29W008EB70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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