參數(shù)資料
型號: M29W008EB90N6E
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述: 8兆(1兆× 8,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 26/43頁
文件大?。?/td> 282K
代理商: M29W008EB90N6E
7 DC and AC characteristics
M29W008ET, M29W008EB
26/43
Figure 9.
AC Testing Load Circuit
Table 8.
Device Capacitance
Note:
Sampled only, not 100% tested.
Table 9.
DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±1
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
±0.2V
RP = V
CC
±0.2V
100
μA
I
CC3(1)
Supply Current
(Program or Erase)
Program,/ Erase Controller
active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage CMOS
I
OH
= –100μA
V
CC
–0.4V
V
V
ID
A9 Voltage (Electronic Signature)
11.5
12.5
V
I
ID
A9 Current (Electronic Signature)
A9 = V
ID
100
μA
V
LKO(1)
1.
Sampled only, not 100% tested.
Supply Voltage (Erase and Program
lock-out)
1.8
2.3
V
AI09445
0.8V
OUT
CL
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
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