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參數(shù)資料
| 型號： | M29W004BB55N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 19/30頁 |
| 文件大?。?/td> | 222K |
| 代理商： | M29W004BB55N1T |
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Symbol
Alt
Parameter
M29W004T / M29W004B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
90
100
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
45
50
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
45
5
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
20
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
45
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μ
s
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise TIme to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
EHRL (1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL (1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 16A. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Erase Resume (ER) Instruction.
If an Erase Sus-
pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.
POWER SUPPLY
Power Up
The memory Command Interface is reset on power
up to Read Array. Either E or W must be tied to V
IH
during Power Up to allow maximum security and
the possibility to write a command on the first rising
edge of E and W. Any write cycle initiation is
blocked when Vcc is below V
LKO
.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V
CC
rail decoupled with a 0.1
μ
F capacitor
close to the V
CC
and V
SS
pins. The PCB trace
widths should be sufficient to carry the V
CC
pro-
gram and erase currents required.
19/30
M29W004T, M29W004B
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| M29W008ET70N1E | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC |
| M29W008ET70N1F | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC |
| M29W008ET70N6E | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC |
| M29W008ET70N6F | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC |
| M29W008EB90N1E | 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004BB55N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB70N1 | 功能描述:閃存 4M (512Kx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W004BB70N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB90N1 | 功能描述:閃存 4M (512Kx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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