- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄180125 > M29F400FB55M3F2 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 PDF資料下載
參數(shù)資料
| 型號： | M29F400FB55M3F2 |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| 封裝： | 0.500 INCH, ROHS COMPLIANT, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 13/65頁 |
| 文件大?。?/td> | 1669K |
| 代理商： | M29F400FB55M3F2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁
Signal Descriptions
M29FxxxFT, M29FxxxFB
20/65
2.7
Write Enable (W).
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
2.8
Reset/Block Temporary Unprotect (RP).
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table Table 18. and Figure Figure 22.,
Reset/Temporary Unprotect AC Characteristics for more details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
2.9
Ready/Busy Output (RB).
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table Table 18. and Figure Figure 22., Reset/Temporary
Unprotect AC Characteristics.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.10
Byte/Word Organization Select (BYTE).
The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in 8-
bit mode, when it is High, VIH, the memory is in 16-bit mode.
2.11
VCC Supply Voltage.
The VCC Supply Voltage supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout
Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F400FB5AN6F2 | 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| M29W800B-120N5RTR | 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| M29W800T-150M6 | 1M X 8 FLASH 3V PROM, 150 ns, PDSO44 |
| M29W800FB9N3F | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| M2CT-90A1-24ER | PUSHBUTTON SWITCH, DPST, MOMENTARY, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F400FB55M3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 44SO |
| M29F400FB55M3T2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays |
| M29F400FB55N3E2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
| M29F400FB55N3F2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Tape and Reel |
| M29F400FB55N3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。