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參數(shù)資料
| 型號(hào)： | M29F400BT90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的x8或256Kb的x16插槽，啟動(dòng)座單電源閃存 |
| 文件頁(yè)數(shù)： | 1/22頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | M29F400BT90N6T |
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1/22
July 2000
M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Single Supply Flash Memory
I
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 45ns
I
PROGRAMMING TIME
– 8μs per Byte/Word typical
I
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)
Figure 1. Logic Diagram
AI02904
18
A0-A17
W
DQ0-DQ14
VCC
M29F400BT
M29F400BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
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| M29F400BT90M6T | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
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