參數(shù)資料
型號(hào)： M29F400BT90N6F
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
中文描述： 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）單電源閃存
文件頁(yè)數(shù)： 10/40頁(yè)
文件大?。?/td> 215K
代理商： M29F400BT90N6F
Signal descriptions
M29F400BT, M29F400BB
10/40
2
Signal descriptions
See
Figure 1.
, Logic Diagram, and
Table 1.
, Signal Names, for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-A17)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the internal state machine.
2.2
Data inputs/outputs (DQ0-DQ7)
The Data Inputs/Outputs output the data stored at the selected address during a Bus Read
operation. During Bus Write operations they represent the commands sent to the Command
Interface of the internal state machine.
2.3
Data inputs/outputs (DQ8-DQ14)
The Data Inputs/Outputs output the data stored at the selected address during a Bus Read
operation when BYTE is High, V
IH
. When BYTE is Low, V
IL
, these pins are not used and are
high impedance. During Bus Write operations the Command Register does not use these
bits. When reading the Status Register these bits should be ignored.
2.4
Data input/output or address input (DQ15A-1)
When BYTE is High, V
IH
, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, V
IL
, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout
the text consider references to the Data Input/Output to include this pin when BYTE is High
and references to the Address Inputs to include this pin when BYTE is Low except when
stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, V
IH
, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
相關(guān)PDF資料
PDF描述
M29F400BT90M1E 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M1F 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M3E 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M3F 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400BT90M6E 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F400BT90N6T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400FB55D11 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Gel-pak, waffle pack, wafer, diced wafer on film
M29F400FB55M32 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays
M29F400FB55M3E2 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 44SO
M29F400FB55M3F2 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Tape and Reel
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