參數(shù)資料
型號(hào)： M29F400BT70MT6T
廠商： NUMONYX
元件分類： PROM
英文描述： 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, PLASTIC, SOP-44
文件頁數(shù)： 6/40頁
文件大?。?/td> 316K
代理商： M29F400BT70MT6T
Bus operations
M29F400BT, M29F400BB
3.5
Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 150ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the CMOS Standby Supply Current, ICC3. The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
3.6
Special bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.6.1
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Tables
Table 2. and Table 3., Bus Operations.
3.6.2
Block Protection and Blocks Unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. For further information refer to
Application Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
Table 2.
Bus operations, BYTE = VIL
(1)
1.
X = VIL or VIH.
Operation
E
G
W
Address Inputs
DQ15A–1, A0-A17
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIH Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL Command Address
Hi-Z
Data Input
Output Disable
X
VIH
VIH X
Hi-Z
Standby
VIH
X
Hi-Z
Read Manufacturer
Code
VIL
VIH
A0 = VIL, A1 = VIL, A9
= VID, Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIH
A0 = VIH, A1 = VIL, A9
= VID, Others VIL or VIH
Hi-Z
D5h (M29F400BT)
D6h (M29F400BB)
相關(guān)PDF資料
PDF描述
M29F800DB70N3F 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F400BT70N1 功能描述:閃存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT70N6 功能描述:閃存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT70N6E 功能描述:閃存 4MBIT EEPROM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90M1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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