參數(shù)資料
型號: M29F160BB70N6T
廠商: 意法半導體
英文描述: 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
中文描述: 16兆位的2Mb x8或1兆x16插槽,啟動座單電源閃存
文件頁數(shù): 1/22頁
文件大?。?/td> 174K
代理商: M29F160BB70N6T
1/22
PRELIMINARY DATA
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29F160BT
M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Single Supply Flash Memory
I
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 55ns
I
PROGRAMMING TIME
– 8μs per Byte/Word typical
I
35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F160BT: 22CCh
– Bottom Device Code M29F160BB: 224Bh
TSOP48 (N)
12 x 20mm
Figure 1. Logic Diagram
AI02920
20
A0-A19
W
DQ0-DQ14
VCC
M29F160BT
M29F160BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
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