參數(shù)資料
型號: M29F016B90N6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座單電源閃存
文件頁數(shù): 15/22頁
文件大?。?/td> 135K
代理商: M29F016B90N6T
15/22
M29F016B
Figure 9. Write AC Waveforms, Write Enable Controlled
AI02967
E
G
W
A0-A20
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Table 12. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
M29F016B
Unit
55
70
90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
55
70
90
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
40
45
45
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
25
30
45
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
20
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
Min
0
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
Min
40
45
45
ns
t
GHWL
Output Enable High to Write Enable Low
Min
0
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
Min
0
0
0
ns
t
WHRL(1)
t
BUSY
Program/Erase Valid to RB Low
Max
30
30
35
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
Min
50
50
50
μ
s
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M29F016B70M1T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70M3T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
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M29F016B70N1T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
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