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參數(shù)資料
| 型號： | M29F016B90M6T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，統(tǒng)一座單電源閃存 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大小： | 135K |
| 代理商： | M29F016B90M6T |
3/22
M29F016B
SUMMARY DESCRIPTION
The M29F016B is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected in groups to prevent accidental Program
or Erase commands from modifying the memory.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controllersimplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a program or eraseoperation can bedetected and
any error conditions identified. The command set
required to control the memory is consistent with
JEDEC standards.
Chip Enable, Output Enableand Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions forextended periods may affect device reliability. Referalso to theSTMicroelectronics SURE Program and other relevantqual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 6
V
V
CC
Supply Voltage
–0.6 to 6
V
V
ID
Identification Voltage
–0.6 to 13.5
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29F016B90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90N3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016B90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory |
| M29F016D | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| M29F016D_05 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
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