參數(shù)資料
型號(hào): M29F016B70N3T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座單電源閃存
文件頁數(shù): 14/22頁
文件大小: 135K
代理商: M29F016B70N3T
M29F016B
14/22
Figure 8. Read Mode AC Waveforms
AI02966
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A20
G
DQ0-DQ7
E
tELQV
tEHQX
tGHQZ
VALID
Table 11. ReadAC Characteristics
(TA = 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29F016B
Unit
55
70
90
t
AVAV
t
RC
Address Validto Next Address Valid
E = V
IL
,
G = V
IL
Min
55
70
90
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
55
70
90
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
Min
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
55
70
90
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
30
30
35
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
18
20
20
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
18
20
20
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
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