參數(shù)資料
型號(hào): M29F016B70M3T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座單電源閃存
文件頁(yè)數(shù): 11/22頁(yè)
文件大小: 135K
代理商: M29F016B70M3T
11/22
M29F016B
Figure 4. Data Polling Flowchart
READ DQ5 &
DQ7
at VALID ADDRESS
START
READ
DQ7
at VALID ADDRESS
FAIL
PASS
AI03598
DQ7
DATA
YES
NO
YES
NO
DQ5
= 1
DQ7
DATA
YES
NO
Figure 5. Data Toggle Flowchart
READ DQ6
START
READ
DQ6
TWICE
FAIL
PASS
AI01370B
DQ6
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ6
TOGGLE
READ
DQ5 & DQ6
Erase Timer Bit (DQ3).
The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase com-
mand.
Once the Program/Erase Controller starts erasing
the Erase Timer Bit is set to ’1’. Before the Pro-
gram/Erase Controller starts the Erase Timer Bit is
set to ’0’ and additional blocks to be erased may
be written to the Command Interface. The Erase
Timer Bit is output on DQ3 when the Status Reg-
ister is read.
Alternative Toggle Bit (DQ2).
The
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Al-
ternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Eraseoperations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
Alternative
successive Bus Read operations from addresses
within theblocks being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to ad-
dresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the er-
ror. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Opera-
tions from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased cor-
rectly.
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M29F016B70M6T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N1T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
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M29F016B70N6T 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F016B70M6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N1 功能描述:閃存 1M (128Kx8) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F016B70N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory
M29F016B70N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory