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參數資料
| 型號： | M29DW640D70ZA1T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁，引導塊）3V電源快閃記憶體 |
| 文件頁數： | 46/56頁 |
| 文件大?。?/td> | 942K |
| 代理商： | M29DW640D70ZA1T |
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M29DW640D
46/56
Note: 1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses 008000h
to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
Table 28. Primary Algorithm-Specific Extended Query Table
35h
36h
6Ah
6Ch
0007h
0000h
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
8
37h
38h
6Eh
70h
0020h
0000h
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 Bytes
8 KBytes
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 information
Address
Data
Description
Value
x16
x8
40h
80h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h
82h
0052h
"R"
42h
84h
0049h
"I"
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0033h
Minor version number, ASCII
"3"
45h
8Ah
0000h
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of sectors in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
Yes
49h
92h
0005h
Block Protect /Unprotect
04 = M29W400B
05 = M29DW640D
5
4Ah
94h
0077h
Simultaneous Operations,
x = number of blocks (excluding Bank A)
119
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0001h
Page Mode, 00 = not supported, 01 = 4 page Word, 02 = 8 page Word
Yes
4Dh
9Ah
00B5h
V
PP
Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
11.5V
4Eh
9Ch
00C5h
V
PP
Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12.5V
Address
Data
Description
Value
x16
x8
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相關代理商/技術參數 |
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| M29DW640D70ZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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| M29DW640D70ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D90N1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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