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參數(shù)資料
| 型號： | M29DW640D70N6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 19/56頁 |
| 文件大小： | 942K |
| 代理商： | M29DW640D70N6F |
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M29DW640D
However, data read from Program-Suspended ad-
dresses is not valid.
The Program Suspend command may also be is-
sued during a program operation while an erase is
suspended. In this case, data may be read from
any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the Extended
Block area (One-time Program area), the user
must use the proper command sequences to enter
and exit this region.
The system may also issue the Auto Select com-
mand sequence when the device is in the Program
Suspend mode. The system can read as many
Auto Select codes as required. When the device
exits the Auto Select mode, the device reverts to
the Program Suspend mode, and is ready for an-
other valid operation. See Auto Select command
sequence for more information.
Program Resume Command
After the Program Resume command is issued,
the device reverts to programming. The controller
can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the
standard program operation. See Write Operation
Status for more information.
The system must write the Program Resume com-
mand, specifying the Bank addresses of the Pro-
gram-Suspended Block, to exit the Program
Suspend mode and to continue the programming
operation.
Further issuing of the Resume command is ig-
nored. Another Program Suspend command can
be written after the device has resumed program-
ming.
Enter Extended Block Command
The M29DW640D has one extra 256-Byte block
(Extended Block) that can only be accessed using
the Enter Extended Block command. Three Bus
write cycles are required to issue the Extended
Block command. Once the command has been is-
sued the device enters Extended Block mode
where all Bus Read or Program operations to the
000000h-00007Fh (Word) or 000000h-0000FFh
(Byte) addresses access the Extended Block. The
Extended Block cannot be erased, and can be
treated as one-time programmable (OTP) memo-
ry. In Extended Block mode only array cell loca-
tions (Bank A) with the same addresses as the
Extended Block (000000h-00007Fh (Word) or
000000h-0000FFh (Byte)) are not accessible. In
Extended Block mode dual operations are allowed
and the Extended Block physically belongs to
Bank A.
When in Extended Block mode, Erase, Chip
Erase, Erase Suspend and Erase resume com-
mands are not allowed.
To exit from the Extended Block mode the Exit Ex-
tended Block command must be issued.
The Extended Block can be protected, however
once protected the protection cannot be undone.
Exit Extended Block Command
The Exit Extended Block command is used to exit
from the Extended Block mode and return the de-
vice to Read mode. Four Bus Write operations are
required to issue the command.
Block Protect and
Chip Unprotect Commands
Groups of blocks can be protected against acci-
dental Program or Erase. The Protection Groups
are shown in Appendix
A
,
Table 23., Block Ad-
dresses
. The whole chip can be unprotected to al-
low the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix
D
.
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PDF描述 |
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| M29DW640D70N6E | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N6 | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1T | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1F | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1E | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW640D70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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