參數(shù)資料
型號(hào)： M29DW324DT90ZA1E
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，雙行16點(diǎn)16分，啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù)： 40/49頁
文件大?。?/td> 815K
代理商： M29DW324DT90ZA1E
M29DW324DT, M29DW324DB
40/49
Table 25. CFI Query System Interface Information
Table 26. Device Geometry Definition
Note: The region information contained in addresses 2Dh to 34h (or 5Ah to 68h) is correct for the M29DW324DB. For the M29DW324DT the
regions must be reversed.
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
46h
0004h
Maximum timeout for byte/word program = 2
n
times typical
256 μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2
n
times typical
8 s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0016h
Device Size = 2
n
in number of bytes
4 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
58h
0002h
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
2
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Region 1 Information
Number of identical size erase block = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8Kbyte
31h
32h
62h
64h
003Eh
0000h
Region 2 Information
Number of identical size erase block = 003Eh+1
63
33h
34h
66h
68h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64Kbyte
相關(guān)PDF資料
PDF描述
M29DW324DB90ZA1E 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW324DT90ZA1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
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