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參數(shù)資料
| 型號： | M29DW324DB90ZA1 |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，雙行16點16分，啟動塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 19/49頁 |
| 文件大小： | 815K |
| 代理商： | M29DW324DB90ZA1 |
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M29DW324DT, M29DW324DB
Table 6. Commands, 8-bit mode, BYTE = V
IL
Note:
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Table 7. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
CC
after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and V
CC
.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1
X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
(BKA)
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Quadruple Byte Program
5
AAA
55
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
BKA
B0
Erase Resume
1
BKA
30
Read CFI Query
1
AA
98
Enter Extended Block
3
AAA
AA
555
55
AAA
88
Exit Extended Block
4
AAA
AA
555
55
AAA
90
X
00
Parameter
Min
Typ
(1, 2)
Max
(2)
Unit
Chip Erase
40
200
(3)
s
Block Erase (64 KBytes)
0.8
6
(3)
s
Erase Suspend Latency time
50
(4)
μs
Program (Byte or Word)
10
200
(4)
μs
Double Word Program (Byte or Word)
10
200
(3)
μs
Chip Program (Byte by Byte)
40
200
(3)
s
Chip Program (Word by Word)
20
100
(3)
s
Chip Program (Quadruple Byte or Double Word)
10
100
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
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相關代理商/技術參數(shù) |
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| M29DW324DB90ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90ZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB90ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
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