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參數(shù)資料
| 型號： | M29DW324DB90N1 |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，雙行16點16分，啟動塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 43/49頁 |
| 文件大?。?/td> | 815K |
| 代理商： | M29DW324DB90N1 |
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M29DW324DT, M29DW324DB
APPENDIX D. BLOCK PROTECTION
Block protection can be used to prevent any oper-
ation from modifying the data stored in the memo-
ry. The blocks are protected in groups, refer to
Appendix A, Tables 21 and 22 for details of the
Protection Groups. Once protected, Program and
Erase operations within the protected group fail to
change the data.
There are three techniques that can be used to
control Block Protection, these are the Program-
mer technique, the In-System technique and Tem-
porary Unprotection. Temporary Unprotection is
controlled by the Reset/Block Temporary Unpro-
tection pin, RP; this is described in the Signal De-
scriptions section.
To protect the Extended Block issue the Enter Ex-
tended Block command and then use either the
Programmer or In-System technique. Once pro-
tected issue the Exit Extended Block command to
return to read mode. The Extended Block protec-
tion is irreversible, once protected the protection
cannot be undone.
Programmer Technique
The Programmer technique uses high (V
ID
) volt-
age levels on some of the bus pins. These cannot
be achieved using a standard microprocessor bus,
therefore the technique is recommended only for
use in Programming Equipment.
To protect a group of blocks follow the flowchart in
Figure 20, Programmer Equipment Block Protect
Flowchart. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all
groups can be unprotected at the same time. To
unprotect the chip follow Figure 21, Programmer
Equipment Chip Unprotect Flowchart. Table 30,
Programmer Technique Bus Operations, gives a
summary of each operation.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a
user message should be provided to show that the
operation is progressing.
In-System Technique
The In-System technique requires a high voltage
level on the Reset/Blocks Temporary Unprotect
pin, RP. This can be achieved without violating the
maximum ratings of the components on the micro-
processor bus, therefore this technique is suitable
for use after the memory has been fitted to the sys-
tem.
To protect a group of blocks follow the flowchart in
Figure 22, In-System Block Protect Flowchart. To
unprotect the whole chip it is necessary to protect
all of the groups first, then all the groups can be
unprotected at the same time. To unprotect the
chip follow Figure 23, In-System Chip Unprotect
Flowchart.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not allow the microprocessor to service interrupts
that will upset the timing and do not abort the pro-
cedure before reaching the end. Chip Unprotect
can take several seconds and a user message
should be provided to show that the operation is
progressing.
Table 30. Programmer Technique Bus Operations, BYTE = V
IH
or V
IL
Note: 1. Block Protection Groups are shown in Appendix D, Tables 21 and 22.
Operation
E
G
W
Address Inputs
A0-A20
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block (Group)
Protect
(1)
V
IL
V
ID
V
IL
Pulse
A9 = V
ID
, A12-A20 Block Address
Others = X
X
Chip Unprotect
V
ID
V
ID
V
IL
Pulse
A9 = V
ID
, A12 = V
IH
, A15 = V
IH
Others = X
X
Block (Group)
Protection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IL
, A9 = V
ID
,
A12-A20 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block (Group)
Unprotection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IH
, A9 = V
ID
,
A12-A20 Block Address
Others = X
Retry = XX01h
Pass = XX00h
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M29DW324DB90N1E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DB90N1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DB90N1T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory |
| M29DW324DB90N6 | 功能描述:閃存 32M (4Mx8 or 2Mx16) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW324DB90N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
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